Two-step growth method of low pressure chemical vapor deposition(LPCVD) process was employed to fabricate the ZnO:B-TCO film; For the first layer, the seed layer with a heavy doping concentration was deposited on the glass substrate, the film having higher deposition rate were then grown on the top of the first layer; It shows that the doping situations of the seed layer play an important role in electrical and optical performance of the whole ZnO:B-TCO layer, and the combination of this two properties is optimal when the doping ratio (B2H6/DEZ) was 0.4;